tm ?2009 fairchild semiconductor corporation 1 www.fairchildsemi.com fgh80n60fd rev. a2 fgh80n60fd 600v, 80 a field stop igbt november 2009 absolute maximum ratings notes : (1) repetitive rating : pulse width li mited by max. junction temperature thermal characteristics symbol description ratings units v ces collector-emitter voltage 600 v v ges gate-emitter voltage ? 20 v i c collector current @ t c = 25 ? c80 a collector current @ t c = 100 ? c40 a i cm (1) pulsed collector current @ t c = 25 ? c 160 a p d maximum power dissipation @ t c = 25 ? c290 w maximum power dissipation @ t c = 100 ? c116 w t j operating junction temperature -55 to +150 ? c t stg storage temperature range -55 to +150 ? c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 ? c symbol parameter typ. max. units r ? jc (igbt) thermal resistance, junction-to-case -- 0.43 ? c / w r ? jc (diode) thermal resistance, junction-to-case 1.5 ? c / w r ? ja thermal resistance, junction-to-ambient -- 40 ? c / w g c e e c g collector (flange) fgh80n60fd 600v, 80a field stop igbt features ? high current capability ? low saturation voltage: v ce(sat) =1.8v @ i c = 40a ? high input impedance ? fast switching ?rohs complaint applications ? induction heating application general description using novel field stop igbt technology, fairchild?s new ses- ries of field stop igbts offer the optimum performance for induction heating applications where low conduction and switching losses are essential.
2 www.fairchildsemi.com fgh80n60fd rev. a2 fgh80n60fd 600v, 80 a field stop igbt package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package packaging type qty per tube max qty per box fgh80n60fd FGH80N60FDTU to-247 tube 30ea - symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? bv ces / ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250ua -- 0.6 -- v/ ? c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 400 na on characteristics v ge(th) g-e threshold voltage i c = 250ua, v ce = v ge 4.5 5.5 7.0 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v -- 1.8 2.4 v i c = 40a , v ge = 15v, t c = 125 ? c -- 2.05 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 2110 -- pf c oes output capacitance -- 200 -- pf c res reverse transfer capacitance -- 60 -- pf switching characteristics t d(on) turn-on delay time v cc = 400 v, i c = 40a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 ? c -- 21 -- ns t r rise time -- 56 -- ns t d(off) turn-off delay time -- 126 -- ns t f fall time -- 50 100 ns e on turn-on switching loss -- 1 1.5 mj e off turn-off switching loss -- 0.52 0.78 mj e ts total switching loss -- 1.52 2.28 mj t d(on) turn-on delay time v cc = 400 v, i c = 40a, r g = 10 ? , v ge = 15v, inductive load, t c = 125 ? c -- 20 -- ns t r rise time -- 54 -- ns t d(off) turn-off delay time -- 131 -- ns t f fall time -- 70 -- ns e on turn-on switching loss -- 1.1 -- mj e off turn-off switching loss -- 0.78 -- mj e ts total switching loss -- 1.88 -- mj q g total gate charge v ce = 400 v, i c = 40a, v ge = 15v -- 120 -- nc q ge gate-emitter charge -- 14 -- nc q gc gate-collector charge -- 58 -- nc
3 www.fairchildsemi.com fgh80n60fd rev. a2 fgh80n60fd 600v, 80 a field stop igbt electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max units v fm diode forward voltage i f = 20a t c = 25 ? c- 2.3 2.8 v t c = 125 ? c- 1.7 - t rr diode reverse recovery time i es =20a, di es /dt = 200a/ ? s t c = 25 ? c- 36 - ns t c = 125 ? c - 105 - i rr diode reverse recovery current t c = 25 ? c- 2.6 - a t c = 125 ? c- 7.8 - q rr diode reverse recovery charge t c = 25 ? c - 46.8 - nc t c = 125 ? c - 409 -
4 www.fairchildsemi.com fgh80n60fd rev. a2 fgh80n60fd 600v, 80 a field stop igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical saturation voltage character istics figure 3. typical saturation voltage figure 4. transfer characteristics c h a r a c t e r i t i c s figure 5. saturation voltage vs. case figur e 6. saturation voltage vs. vge te mperature at variant current level 0246810 0 40 80 120 160 20v t c = 25 o c 12v 15v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0246810 0 40 80 120 160 20v t c = 125 o c 12v 15v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 3.5 80a 40a 20a common emitter v ge = 15v collector-emitte r voltage, v ce [v] case temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 0123456 0 40 80 120 160 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 24681012 0 40 80 120 160 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v]
5 www.fairchildsemi.com fgh80n60fd rev. a2 fgh80n60fd 600v, 80 a field stop igbt typical performance characteristics (continued) figure 7. saturation voltage vs. vge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteeristics figure 11. turn-off switching soa figure 12. turn-on characteristics vs. characteristics gate resistance 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0.1 1 10 0 1000 2000 3000 4000 5000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c rss c oss c iss capacitance [pf] collector-emitter voltage, v ce [v] 30 1 10 100 1000 0.01 0.1 1 10 100 1ms 10 ms dc single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 400 0 50 100 150 0 3 6 9 12 15 common emitter t c = 25 o c 300v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 1020304050 10 100 200 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 5 1 10 100 1000 1 10 100 safe operating area v ge = 20v, t c = 100 o c collector current, i c [a] collector-emitter voltage, v ce [v] 200
6 www.fairchildsemi.com fgh80n60fd rev. a2 fgh80n60fd 600v, 80 a field stop igbt typical performance characteristics (continued) figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs gate resistance collector current figure 17. switching loss vs collect or current 0 1020304050 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 2000 20 40 60 80 10 100 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 200 20 40 60 80 100 500 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 20 0 1020304050 1 0.3 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 5 20 40 60 80 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c e on e off switching loss [mj] collector current, i c [a]
7 www.fairchildsemi.com fgh80n60fd rev. a2 fgh80n60fd 600v, 80 a field stop igbt typical performance characteristics (continued) figure 18. transient thermal impedance of igbt figure 19. typical forward voltage drop figure 20. stored charge figure 21. reverse recovery time figure 22. reverse recovery current 01234 0.1 1 10 100 t c = 75 o c t c = 25 o c t c = 125 o c forward voltage , v f [v] forward current , i f [a] 100 200 300 400 0 100 200 300 400 500 600 125 o c 25 o c stored recovery charge , q rr [nc] di/dt ,[a/ ? s] 100 200 300 400 20 40 60 80 100 120 140 125 o c 25 o c reverse recovery time, t rr [ns] di/dt, [a/ ? s] 5 100 200 300 400 0 5 10 15 20 125 o c 25 o c reverse recovery current, i rr [a] di/dt, [a/ ? s] 5 1e-5 1e-4 1e-3 0.01 0.1 1 1e-3 0.01 0.1 1 0.2 0.5 0.1 0.05 0.01 0.02 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c t 1 p dm t 2
8 www.fairchildsemi.com fgh80n60fd rev. a2 fgh80n60fd 600v, 80 a field stop igbt to-247ab (fks pkg code 001) mechanical dimensions
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